? 2008 ixys corporation, all rights reserved polar tm p & n-channel power mosfets common drain topology ds100034(08/08) symbol test conditions maximum ratings t j - 55 ... +150 c t jm 150 c t stg - 55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c v isol 50/60hz, rms, t=1s, leads-to-tab 2500 v~ f c mounting force 20..120 / 4.5..27 n/lb. symbol test conditions characteristic values min. typ. max. c p coupling capacitance between shorted 40 pf pins and mounting tab in the case d s ,d a pin - pin 1.7 mm d s ,d a pin - backside metal 5.5 mm weight 9 g FMP36-015P features z silicon chip on direct-copper bond (dcb) substrate - ul recognized package - isolated mounting surface - 2500v electrical isolation z avalanche rated z low q g z low drain-to-tab capacitance z low package inductance advantages z low gate drive requirement z high power density z low drain to ground capacitance z fast switching applications z dc and ac motor drives z class ab audio amplifiers z multi-phase dc to dc converters z industrial battery chargers z switching power supplies symbol test conditions maximum ratings v dss t j = 25 c to 150 c -150 v v dgr t j = 25 c to 150 c, r gs = 1m -150 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25 c - 22 a i dm t c = 25 c, pulse width limited by t jm - 90 a i a t c = 25 c - 36 a e as t c = 25 c 1.5 j p d t c = 25 c 125 w advance technical information p - channel p ch. n ch. v dss - 150v 150v i d25 - 22a 36a r ds(on) 110m 40m t rr(typ) 228ns 150ns t2 3 5 4 1 2 t1 2 3 4 5 1 isoplus i4-pak tm 1 5 isolated tab
ixys reserves the right to change limits, test conditions, and dimensions. FMP36-015P isoplus i4-pak tm outline ref: ixys co 0077 r0 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 symbol test conditions 2 characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = - 250 a -150 v v gs(th) v ds = v gs , i d = - 250 a - 2.5 - 4.5 v i gss v gs = 20v, v ds = 0v 100 na i dss v ds = v dss , v gs = 0v -10 a t j = 125 c - 250 a r ds(on) v gs = -10v, i d = -18a, note 1 110 m g fs v ds = -10v, i d = -18a, note 1 11 19 s c iss 3100 pf c oss v gs = 0v, v ds = - 25 v, f = 1mhz 610 pf c rss 100 pf t d(on) resistive switching times 21 ns t r v gs = -10v, v ds = 0.5 z v dss , i d = -18a 31 ns t d(off) r g = 3.3 (external) 36 ns t f 15 ns q g(on) 55 nc q gs v gs = -10v, v ds = 0.5 z v dss , i d = -18a 20 nc q gd 18 nc r thjc 1.0 c/w r thcs 0.15 c/w drain-source diode characteristic values (t j = 25 c unless otherwise specified) symbol test conditions 2 min. typ. max. i s v gs = 0v - 22 a i sm repetitive, pulse width limited by t jm -140 a v sd i f = -18a, v gs = 0 v, note 1 - 3.3 v t rr i f = -18a, di/dt = 100 a/ s 228 ns q rm v r = - 75v, v gs = 0v 2.0 c i rm -17.6 a
? 2008 ixys corporation, all rights reserved FMP36-015P n - channel symbol test conditions maximum ratings v dss t j = 25 c to 150 c 150 v v dgr t j = 25 c to 150 c; r gs = 1m 150 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25 c 36 a i dm t c = 25 c, pulse width limited by t jm 150 a i a t c = 25 c 50 a e as t c = 25 c 1.0 j p d t c = 25 c 125 w symbol test conditions 2 characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 150 v v gs(th) v ds = v gs , i d = 250 a 3.0 5.5 v i gss v gs = 20 v, v ds = 0v 100 na i dss v ds = v dss , v gs = 0v 25 a t j = 150 c 250 a r ds(on) v gs = 10v, i d = 31a, (note 1) 33 40 m g fs v ds = 10v, i d = 31a, (note 1) 14 24 s c iss 2250 pf c oss v gs = 0v, v ds = 25 v, f = 1 mhz 660 pf c rss 185 pf t d(on) resistive switching times 27 ns t r v gs = 10v, v ds = 0.5 z v dss , i d = 31a 38 ns t d(off) r g = 10 (external) 76 ns t f 35 ns q g(on) 70 nc q gs v gs = 10v, v ds = 0.5 z v dss , i d = 31a 20 nc q gd 38 nc r thjc 1.0 c/w r thcs 0.15 c/w
ixys reserves the right to change limits, test conditions, and dimensions. FMP36-015P advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated objective result. ixys reserves the right source-drain diode characteristic values t j = 25 c unless otherwise specified) symbol test conditions 3 min. typ. max. i s v gs = 0v 36 a i sm repetitive, pulse width limited by t jm 150 a v sd i f = 62a, v gs = 0v, note 1 1.5 v t rr i f = 25a, -di/dt = 100a/ s 150 ns q rm v r = 100v, v gs = 0v 2.0 c note 1: pulse test, t 300 s, duty cycle, d 2 %.
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